DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 11: Poster Session I: Application of thin films; Ion beam induced surface patterns; Ion and electron beam induced processes; Micro- and nanopatterning (jointly with O)

DS 11.2: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Controlling sputter yield during multilayer preparation for high resolution multilayer zone plates — •Christian Eberl1, Florian Döring1, Tobias Liese1, Felix Schlenkrich1, Volker Radisch1, Hans-Ulrich Krebs1, Anna-Lena Robisch2, Aike Ruhland2, Markus Osterhoff2, Sarah Hoffmann2, Matthias Bartels2, and Tim Salditt21Institut für Materialphysik, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2Institut für Röntgenphysik, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Due to the deposition of energetic particles, pulsed laser deposition (PLD) is a suitable technique to produce high-quality multilayers without cumulative roughness. Even surface roughness of a wire, on which aperiodic multilayers were grown for multilayer zone plates (MZP), could be smoothed. Unfortunately, the transferred energetic ions induce resputtering of deposited material, especially on such curved surfaces. Not loosing layer thickness or interface quality, both a fundamental understanding and controlling of the underlying processes are essential. For this purpose, the interface behaviours of very different materials, such as W and Si, have been investigated. In this context, resputtering of W (up to 2 nm) was observed by both in-situ deposition rate monitoring and x-ray reflectivity measurements and could be verified by dynamical simulations. This effect could successfully be controlled by adjusting the laser fluence for both Si and W. With this knowledge, a highly precise MPZ could be fabricated showing hard x-ray focusing with focal width of less than 10 nm (FWHM).

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2013 > Regensburg