Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.3: Poster

Donnerstag, 14. März 2013, 17:00–20:00, Poster B2

Atomic Layer deposition of TiO₂ from TDMAT and H₂O: Evolution of microstructure and resulting resistance switching characteristics — •Solveig Rentrop¹, Barbara Abendroth¹, Theresa Moebus¹, Ralph Strohmeyer¹, Alexander Schmid², and Dirk C. Meyer¹ — ¹Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg — ²Institut für Angewandte Physik, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg

Atomic layer deposition (ALD) is a well-known technique used for the fabrication of thin oxide layers for high-k-dielectrics and resistive switching memory applications. Here, we present studies on the atomic layer deposition of TiO₂ from Tetrakis(dimethylamino)titan (TDMAT) and H₂O precursors in the substrate temperature range from 150 ^∘C to 350 ^∘C. The effects of the deposition temperature T_s and layer thickness d on the resulting anatase and rutile phase composition are investigated by grazing incidence X-ray diffraction. For T_s above 200 ^∘C metastable anatase is always the first crystallized phase observed. At temperatures of 250 ^∘C and higher anatase formation is always followed by the nucleation of rutile. Our results are summarized in a T_s−d phase diagram. To determine the effect of the presence of crystalline phases on resistance switching performance, current-voltage characteristics are measured for Au-TiO₂-TiN capacitor structures with amorphous, partially and fully crystalline TiO₂ layers.