Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 66: GaN: Preparation and characterization of rods and wires
HL 66.4: Vortrag
Mittwoch, 13. März 2013, 17:45–18:00, H15
Optical and structural properties of InGaN/GaN multiple quantum wells grown on GaN nanorods by metal-organic vapor phase epitaxy — •Martin Heilmann1, Christian Tessarek1, Christel Dieker2, Erdmann Spiecker2, and Silke Christiansen1 — 1Max-Planck-Institute for the Science of Light, Günther-Scharowsky-Str. 1, 91058 Erlangen — 2University Erlangen-Nuremberg, Center for Nanoanalysis and Electron Microscopy (CENEM), Cauerstraße 6, 91058 Erlangen
Hexagonally shaped GaN nanorods with varying aspect ratios were grown mask-free and uncatalyzed on c-sapphire substrates by metal-organic vapor phase epitaxy. The vertical nanorods consist of six nonpolar sidewalls (m-plane) and one polar top facet (c-plane) which serve as growth surface for InGaN/GaN multiple quantum wells (MQWs). The influence of the growth temperature and growth time on the light emission characteristics of the core-shell structures will be quantified.
The optical properties of the MQWs were investigated by room temperature cathodoluminescence. The emission wavelength could be adjusted between 420 and 460 nm by changing the growth conditions. Scanning transmission electron microscopy was used to evaluate the structural properties of the MQWs. The optical and structural differences between MQWs grown on the c- and m-planes of the GaN nanorods will be presented.