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17:00 |
HL 66.1 |
Hybrid inorganic/organic GaN-based nanowire structures for Förster resonant energy transfer — •Johannes Zettler, Sergio Fernández-Garrido, Oliver Brandt, Lutz Geelhaar, and Henning Riechert
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17:15 |
HL 66.2 |
The contribution has been moved to HL 68.27.
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17:30 |
HL 66.3 |
Nanometer scale correlation of optical and structural properties of individual InGaN/GaN nanorods by Scanning Transmission Electron Microscope Cathodoluminescence — •Marcus Müller, Gordon Schmidt, Peter Veit, Silke Petzold, Frank Bertram, Jürgen Christen, Steven Albert, Ana María Bengoechea-Encabo, Miguel Ángel Sánchez-Garcia, and Enrique Calleja
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17:45 |
HL 66.4 |
Optical and structural properties of InGaN/GaN multiple quantum wells grown on GaN nanorods by metal-organic vapor phase epitaxy — •Martin Heilmann, Christian Tessarek, Christel Dieker, Erdmann Spiecker, and Silke Christiansen
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18:00 |
HL 66.5 |
Impact of Structural Properties on the Internal Quantum efficiency of InGaN - GaN Core-Shell Nanorods — •Tilman Schimpke, Martin Mandl, Fabian Schuster, Gregor Koblmüller, Martin Stutzmann, Stephan Furthmeier, Dominique Bougeard, Elisabeth Reiger, Tobias Korn, Christian Schüller, Hans-Jürgen Lugauer, and Martin Strassburg
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18:15 |
HL 66.6 |
MOVPE Growth of Position-Controlled InGaN / GaN Core-Shell Nanorods — •Martin Mandl, Tilman Schimpke, Michael Binder, Bastian Galler, Xue Wang, Johannes Ledig, Milena Ehrenburg, Hergo-Heinrich Wehmann, Andreas Waag, Xiang Kong, Achim Trampert, Hans-Jürgen Lugauer, and Martin Strassburg
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18:30 |
HL 66.7 |
Catalyst-free, self-organized growth of GaN nanorods on r-plane and c-plane sapphire with MBE and MOVPE — •Julian Stöver, Timo Aschenbrenner, Stephan Figge, Gerd Kunert, and Detlef Hommel
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18:45 |
HL 66.8 |
Superradiant luminescence of GaN nanowires on diamond — •Fabian Schuster, Andrea Winnerl, Saskia Weiszer, Jose Garrido, and Martin Stutzmann
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19:00 |
HL 66.9 |
Germanium doping of self assembled GaN nanowires grown by plasma assisted molecular beam epitaxy — •Pascal Hille, Paula Neuderth, Jörg Schörmann, Markus Schäfer, Jan Müßener, Pascal Becker, Matthias Kleine-Boyman, Marcus Rohnke, Maria de la Mata, Jordi Arbiol, Detlev M. Hofmann, Thomas Sander, Peter J. Klar, Jörg Teubert, and Martin Eickhoff
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19:15 |
HL 66.10 |
Electrical characterization of doped single GaN nanowires: A comparison of Si- and Ge-doping — •Markus Schäfer, Christian Länger, Marius Günther, Pascal Hille, Jörg Schörmann, Jörg Teubert, and Martin Eickhoff
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