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Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 66: GaN: Preparation and characterization of rods and wires

Wednesday, March 13, 2013, 17:00–19:30, H15

17:00 HL 66.1 Hybrid inorganic/organic GaN-based nanowire structures for Förster resonant energy transfer — •Johannes Zettler, Sergio Fernández-Garrido, Oliver Brandt, Lutz Geelhaar, and Henning Riechert
  17:15 HL 66.2 The contribution has been moved to HL 68.27.
17:30 HL 66.3 Nanometer scale correlation of optical and structural properties of individual InGaN/GaN nanorods by Scanning Transmission Electron Microscope Cathodoluminescence — •Marcus Müller, Gordon Schmidt, Peter Veit, Silke Petzold, Frank Bertram, Jürgen Christen, Steven Albert, Ana María Bengoechea-Encabo, Miguel Ángel Sánchez-Garcia, and Enrique Calleja
17:45 HL 66.4 Optical and structural properties of InGaN/GaN multiple quantum wells grown on GaN nanorods by metal-organic vapor phase epitaxy — •Martin Heilmann, Christian Tessarek, Christel Dieker, Erdmann Spiecker, and Silke Christiansen
18:00 HL 66.5 Impact of Structural Properties on the Internal Quantum efficiency of InGaN - GaN Core-Shell Nanorods — •Tilman Schimpke, Martin Mandl, Fabian Schuster, Gregor Koblmüller, Martin Stutzmann, Stephan Furthmeier, Dominique Bougeard, Elisabeth Reiger, Tobias Korn, Christian Schüller, Hans-Jürgen Lugauer, and Martin Strassburg
18:15 HL 66.6 MOVPE Growth of Position-Controlled InGaN / GaN Core-Shell Nanorods — •Martin Mandl, Tilman Schimpke, Michael Binder, Bastian Galler, Xue Wang, Johannes Ledig, Milena Ehrenburg, Hergo-Heinrich Wehmann, Andreas Waag, Xiang Kong, Achim Trampert, Hans-Jürgen Lugauer, and Martin Strassburg
18:30 HL 66.7 Catalyst-free, self-organized growth of GaN nanorods on r-plane and c-plane sapphire with MBE and MOVPE — •Julian Stöver, Timo Aschenbrenner, Stephan Figge, Gerd Kunert, and Detlef Hommel
18:45 HL 66.8 Superradiant luminescence of GaN nanowires on diamond — •Fabian Schuster, Andrea Winnerl, Saskia Weiszer, Jose Garrido, and Martin Stutzmann
19:00 HL 66.9 Germanium doping of self assembled GaN nanowires grown by plasma assisted molecular beam epitaxy — •Pascal Hille, Paula Neuderth, Jörg Schörmann, Markus Schäfer, Jan Müßener, Pascal Becker, Matthias Kleine-Boyman, Marcus Rohnke, Maria de la Mata, Jordi Arbiol, Detlev M. Hofmann, Thomas Sander, Peter J. Klar, Jörg Teubert, and Martin Eickhoff
19:15 HL 66.10 Electrical characterization of doped single GaN nanowires: A comparison of Si- and Ge-doping — •Markus Schäfer, Christian Länger, Marius Günther, Pascal Hille, Jörg Schörmann, Jörg Teubert, and Martin Eickhoff
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