Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 66: GaN: Preparation and characterization of rods and wires
HL 66.6: Vortrag
Mittwoch, 13. März 2013, 18:15–18:30, H15
MOVPE Growth of Position-Controlled InGaN / GaN Core-Shell Nanorods — •Martin Mandl1,2, Tilman Schimpke1, Michael Binder1, Bastian Galler1, Xue Wang2, Johannes Ledig2, Milena Ehrenburg2, Hergo-Heinrich Wehmann2, Andreas Waag2, Xiang Kong3, Achim Trampert3, Hans-Jürgen Lugauer1, and Martin Strassburg1 — 1Osram Opto Semiconductors GmbH, Regensburg — 2Institut für Halbleitertechnik, TU Braunschweig — 3Paul-Drude-Institut für Festkörperelektronik, Berlin
Core-shell group III-nitride nano- and microrods (NAMs) enable a significant increase of the active layer area by exploiting the non-polar side facets (m-planes) and thus can potentially contribute to mitigating the so-called efficiency droop in LEDs.
GaN NAMs exhibiting high aspect ratios were grown in a production-type MOVPE system. Low V/III ratio, hydrogen-rich carrier gas mixture and surfactants supported the 3D growth of the pencil-shape n-type GaN core. Desired narrow distributions of shape, diameter and height were achieved. The arrangement of the NAMs was controlled by patterns etched into SiO2 masks deposited on GaN templates. The active layer (InGaN/GaN SQW and MQWs) and the layer for the p-side were deposited with 2D-like conditions wrapped around the core. The crystalline quality of the NAMs, shell growth rates and the Indium distribution were investigated by high resolution transmission electron microscopy. Furthermore, optical emission was studied using density-dependent photoluminescence spectroscopy.