Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 66: GaN: Preparation and characterization of rods and wires
HL 66.5: Vortrag
Mittwoch, 13. März 2013, 18:00–18:15, H15
Impact of Structural Properties on the Internal Quantum efficiency of InGaN - GaN Core-Shell Nanorods — •Tilman Schimpke1,2, Martin Mandl1, Fabian Schuster2, Gregor Koblmüller2, Martin Stutzmann2, Stephan Furthmeier3, Dominique Bougeard3, Elisabeth Reiger3, Tobias Korn3, Christian Schüller3, Hans-Jürgen Lugauer1, and Martin Strassburg1 — 1Osram Opto Semiconductors GmbH, Regensburg — 2Walter Schottky Institut, Technische Universität München — 3Institut für Exp. und Angew. Physik, Universität Regensburg
Core-shell III-nitride nanorods (NRs) have been proposed to solve a major issue in solid-state lighting, the so-called efficiency droop, by significantly increasing the active layer area scaling with the aspect ratio. However, the reported internal quantum efficiencies (IQE) in such core-shell structures are behind best planar LEDs.
To study the processes limiting the IQE, position-controlled GaN/InGaN core-shell NRs were grown by MOVPE with diameters between 300nm and 1.5µm and aspect ratios of >5. The recombination processes in the InGaN quantum wells were investigated by temperature-dependent and time-resolved PL measurements. In addition, microscopic resolution was applied to correlate the structural properties obtained by SEM and Raman spectroscopy with optical properties. E.g., a double peak emission observed in micro-PL could be related to the semi-polar and non-polar facets of the InGaN quantum wells, respectively. The IQE values were deduced by temperature-dependent and time-resolved PL measurements.