Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.15: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
In situ characterization of MOVPE grown GaPN/GaP/Si(100) for photoelectrolysis — •Oliver Supplie1,2, Helena Stange1,2, Matthias M. May1,2, Christian Höhn1, Christian Koppka3, Katja Tonisch3, Henning Döscher1,3,4, and Thomas Hannappel1,3,5 — 1Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe — 2Humboldt-Universität zu Berlin, Institut für Physik — 3TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik — 4NREL, Golden, CO, USA — 5CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, Erfurt
A photoelectrochemical diode consisting of a Si bottom and a lattice-matched GaPN top cell promises both high photovoltaic energy conversion efficiency and supply of the minimum voltage necessary for photoelectrolysis [1]. Existing devices based on GaPN-on-Si heterostructures, however, suffer from low efficiency due to material quality issues [2]. To achieve in situ control, we monitor the whole MOVPE-preparation with reflection anisotropy spectrom and mass spectrometry in order to compare the established GaP/Si(100) preparation [3] to the dilute nitride system with regard to surface preparation and principal MOVPE growth parameters. We benchmark the in situ signals (i) after contamination-free MOVPE-to-UHV transfer with surface science techniques such as low energy electron diffraction and photoelectron spectroscopy as well as (ii) ex situ by high-resolution X-ray diffraction, photoluminescence and atomic force microscopy.
[1] Döscher et al., ChemPhysChem 13:2899. [2] Geisz et al., EUPVSEC 19(2004). [3] Döscher et al., JAP 107:123523.