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16:00 |
HL 68.1 |
Characteristics of AlGaN Schottky photodiodes for UV-C detection — •Simon Kapanke, Jessica Schlegel, Andrea Knigge, Xuemei Wang, Jens Rass, Hassan Gargouri, Frank Brunner, Markus Weyers, and Michael Kneissl
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16:00 |
HL 68.2 |
Whispering gallery modes in GaN micro- and nanorods by metal-organic vapor phase epitaxy — •Christian Tessarek, George Sarau, and Silke Christiansen
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16:00 |
HL 68.3 |
DBR for 3D-GaN-LEDs — •Jana Hartmann, Lorenzo Caccamo, Stephan Merzsch, Xue Wang, Martin Thunert, Helena Franke, Rüdiger Schmidt-Grund, Hergo-Heinrich Wehmann, Marius Grundmann, and Andreas Waag
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16:00 |
HL 68.4 |
Effect of high thermal stress on the internal quantum efficiency of GaInN LED structures — •Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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16:00 |
HL 68.5 |
Effect of barrier height and indium composition on the internal quantum efficiency of (In)AlGaN multiple quantum well structures — •Nikolay Ledentsov Jr., Christoph Reich, Frank Mehnke, Christian Kuhn, Tim Wernicke, Tim Kolbe, Neysha Lobo Ploch, Jens Rass, Viola Kueller, and Michael Kneissl
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16:00 |
HL 68.6 |
Light trapping in Gallium Nitride nanostructures formed by maskless dry etching — •Anna Haab, Jiehong Jin, Toma Stoica, Beata Kardynal, Andreas Winden, Hilde Hardtdegen, Martin Mikulics, and Detlev Grützmacher
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16:00 |
HL 68.7 |
Influence of chemical treatments and the attachment of functional molecules on the surface properties of GaN — •Georg Eichapfel, Marcel Himmerlich, Stefan Krischok, Stefan U. Schwarz, Volker Cimalla, and Oliver Ambacher
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16:00 |
HL 68.8 |
Quantification of internal electric fields in InGaN/GaN quantum wells by differential phase contrast microscopy — •Matthias Lohr, Ralph Schregle, Ines Pietzonka, Martin Strassburg, Robert Leute, Ferdinand Scholz, Knut Müller, Andreas Rosenauer, and Josef Zweck
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16:00 |
HL 68.9 |
Investigations of electrolyte/ group-III-nitride interfaces with electrical methods — •Martin Gottschalk, Hartmut Witte, Armin Dadgar, and Alois Krost
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16:00 |
HL 68.10 |
Dislocation related luminescence properties in multiple InGaN quantum well structures — •Manuel Frey, Ingo Tischer, Matthias Hocker, Dario Schiavon, Matthias Peter, and Klaus Thonke
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16:00 |
HL 68.11 |
Design of a high temperature Hall measurement setup — •Dominik Beck, Matthias Hocker, and Klaus Thonke
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16:00 |
HL 68.12 |
Growth of AlN by pulsed and conventional MOVPE — •Hanno Kröncke, Timo Aschenbrenner, Stefan Figge, and Detlev Hommel
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16:00 |
HL 68.13 |
Epitaxial growth of smooth GaAs layers on non-miscut GaAs (111)A and GaAs (111)B substrates — •Julian Ritzmann, Rüdiger Schott, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck
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16:00 |
HL 68.14 |
Effects of substrate temperature and annealing on structural properties of GaP/Si(100) grown by gas-source molecular-beam epitaxy — •Emad Hameed Hussein, Shabnam Dadgostar, Fariba Hatami, and W. Ted Masselink
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16:00 |
HL 68.15 |
In situ characterization of MOVPE grown GaPN/GaP/Si(100) for photoelectrolysis — •Oliver Supplie, Helena Stange, Matthias M. May, Christian Höhn, Christian Koppka, Katja Tonisch, Henning Döscher, and Thomas Hannappel
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16:00 |
HL 68.16 |
Impact of growth temperature on the interface quality of AlP/GaP superlattices grown using gas-source molecular-beam epitaxy — •Shabnam Dadgostar, Fariba Hatami, and William.Ted Masselink
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16:00 |
HL 68.17 |
Bandgap engineering of GaAs by ion-implantation and flash lamp annealing — •Kun Gao, Slawomor Prucnal, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
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16:00 |
HL 68.18 |
Treatment of light emitting equipment on the base of III-V semiconductive compound for information visual reflection systems — •Ia Trapaidze, Maia Jgenti, Lia Trapaidze, and Gela Goderdzishvili
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16:00 |
HL 68.19 |
Optical gain and lasing in GaNAsP/BGa(As)P heterostructures grown on (001) silicon substrate — •Markus Finkeldey, Nektarios Koukourakis, Nils C. Gerhardt, Martin R. Hofmann, Martin Zimprich, Kerstin Volz, Wolfgang Stolz, and Bernardette Kunert
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16:00 |
HL 68.20 |
Non-exponential photoluminescence transients in GaNAsP lattice matched to (001) silicon substrate — •Nils C. Gerhardt, Nektarios Koukourakis, Markus Finkeldey, Martin R. Hofmann, Martin Zimprich, Kerstin Volz, Wolfgang Stolz, Kakhaber Jandieri, Florian Gebhard, Sergei Baranovskii, and Bernardette Kunert
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16:00 |
HL 68.21 |
Time-resolved luminescence studies of rare earth doped III-nitrides grown at high temperature and high pressure — •Oliver Beck, Tristan Koppe, Takashi Taniguchi, Hans Hofsäss, and Ulrich Vetter
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16:00 |
HL 68.22 |
Investigation of the effective mass in diluted nitride semiconductors — •Faina Lomakina, Oleksiy Drachenko, Harald Schneider, Amalia Patanè, and Manfred Helm
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16:00 |
HL 68.23 |
A numerical framework to analyze the nature of guided light in waveguide quantum electrodynamics — •Christoph Martens and Kurt Busch
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16:00 |
HL 68.24 |
Design and Optimization and Fabrication of Photonic Crystal Structures for Single Photon Applications — •Carlo Barth, Michael Adler, Jürgen Probst, Max Schoengen, Bernd Löchel, Janik Wolters, and Oliver Benson
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16:00 |
HL 68.25 |
Photon correlations in one-dimensional coupled resonator optical waveguides — •Matthias Moeferdt, Peter Schmitteckert, and Kurt Busch
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16:00 |
HL 68.26 |
Systematic analysis of intracavity dispersion and absorption effects of a modelocked semiconductor laser — •Benjamin Döpke, Jan C. Balzer, Andreas Klehr, Götz Erbert, Günther Tränkle, and Martin R. Hofmann
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16:00 |
HL 68.27 |
Investigation of the polarity of GaN nanowires grown by MBE on AlN/Si(111) with respect to substrate polarity — •Henning Hollermann, Joerg Malindretos, and Angela Rizzi
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