Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.7: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Influence of chemical treatments and the attachment of functional molecules on the surface properties of GaN — •Georg Eichapfel1, Marcel Himmerlich1, Stefan Krischok1, Stefan U. Schwarz2,3, Volker Cimalla2, and Oliver Ambacher2,3 — 1Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau — 2Institut für Mikrosystemtechnik, Albert-Ludwigs-Universität Freiburg, Georges-Köhler-Allee 106, 79110 Freiburg — 3Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg
The functionalization of GaN surfaces is a promising pathway for the realization of semiconductor-based biosensors. Several approaches for the attachment of biosensitive functionalizations to GaN have already been reported in the literature. A detailed knowledge about the mechanisms of molecule attachment and surface reactions are of great importance to understand the electrical behavior of processed sensors. Within this framework, the surface pretreatment and the resulting functional groups play a crucial role. We present photoelectron spectroscopy investigations on the chemical modification of GaN(0001) surfaces and their interaction with ethene. Changes in the surface composition and the formed chemical bonds are characterized and their influence on the electronic properties is discussed. The results are compared with the surface properties of GaN sensor structures that have been thermally or photochemically functionalized with 1-alkenes.