Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.26: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Systematic analysis of intracavity dispersion and absorption effects of a modelocked semiconductor laser — •Benjamin Döpke¹, Jan C. Balzer¹, Andreas Klehr², Götz Erbert², Günther Tränkle², and Martin R. Hofmann¹ — ¹Chair for Photonics and Terahertz Technology, Ruhr-Universität Bochum, D-44801 Bochum, Germany — ²Ferdinand Braun Institute, D-12489 Berlin, Germany

Modelocked multi-section semiconductor laser diodes are a promising source for ultrafast pulses. They offer a potentially compact and cost-effective alternative to pulsed Ti:sapphire lasers. In addition they have a higher flexibility of the design wavelength compared to fiber lasers. However, in spite of a gain bandwidth greater than 50 nm, intracavity dynamics governed by dispersion limit the obtainable modelocked bandwidth, resulting in typical compressed pulse-widths of more than 200 fs.

We present a systematic study of intracavity dispersion and absorption effects of a multi-segment triple quantum well ridge waveguide semiconductor laser with a central wavelength of 850 nm in an external cavity. The external cavity consists of a folded 4f grating compressor. A spatial light modulator in the Fourier plane of the compressor enables us to modify spectral phase and amplitude. This allows fine-grained control of resonator dispersion and losses in various operating conditions of the laser.