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Hamburg 2016 – scientific programme

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T: Fachverband Teilchenphysik

T 53: Halbleiterdetektoren III (Strahlenhärte)

Tuesday, March 1, 2016, 16:45–19:00, VMP8 HS

16:45 T 53.1 3-Dimensional Charge Collection Efficiency measurements using volumetric tomographic reconstruction — •Daniel Dobos
17:00 T 53.2 Strahlenhärte von n-in-p Siliziumstreifensensoren für das CMS-Phase-II-UpgradeFelix Bögelspacher, Alexander Dierlamm, •Marius Metzler, Thomas Müller, Martin Printz, Daniel Schell und Pia Steck
17:15 T 53.3 Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade — •Matteo Centis Vignali, Doris Eckstein, Thomas Eichhorn, Erika Garutti, Alexandra Junkes, and Georg Steinbrück
17:30 T 53.4 X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO2 interface of segmented silicon sensors — •Ioannis Kopsalis, Eckhart Fretwurst, Erika Garutti, Robert Klanner, and Joern Schwandt
17:45 T 53.5 TSC measurements on proton-irradiated p-type Si-sensors — •Elena Donegani, Eckhart Fretwurst, Erika Garutti, and Alexandra Junkes
18:00 T 53.6 Messungen des Leckstroms zur Bestimmung der effektiven Bandlücke und Schädigungskonstante stark bestrahlter Siliziumsensoren — •Moritz Wiehe, Tony Affolder, Gianluigi Casse, Paul Dervan, Susanne Kühn, Riccardo Mori, Ulrich Parzefall und Sven Wonsak
18:15 T 53.7 An edge-TCT setup for the investigation of radiation damaged silicon sensors — •Finn Feindt, Christian Scharf, Erika Garutti, and Robert Klanner
18:30 T 53.8 Module mit dünnen planaren Silizium-Sensoren für den ATLAS Pixel-Detektor am HL-LHC — •Natascha Savic, Anna Macchiolo, Richard Nisius und Stefano Terzo
18:45 T 53.9 Absorption of light, drift velocity, and trapping times in highly irradiated silicon pad sensors — •Christian Scharf, Robert Klanner, and Erika Garutti
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