Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.16: Poster
Mittwoch, 3. April 2019, 17:30–20:00, Poster E
UVB LED with narrow emission angle using advanced silicon-based reflector package and Fresnel lens — •Anna Ghazaryan1, Martin Guttmann1, Tim Wernicke1, Neysha Lobo Ploch2, Tim Kolbe2, Katrin Hilbrich2, Steffen Knigge2, Dennis Mitrenga3, Indira Käpplinger3, Thomas Ortlepp3, Sven Einfeldt2, and Michael Kneissl1,2 — 1Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany — 3CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany
InAlGaN-based LEDs in the UVB spectral range are interesting for a number of applications. Depending on the application of the UVB LEDs, a specific radiation pattern typically with a strong forward emission is needed. In this paper we investigate the influence of different package designs and optical elements on the far-field radiation pattern of UVB LEDs emitting around 310 nm by measuring the angle dependent electroluminescence and total output power. The optimized package with Al reflector and Fresnel lens allows a more directional light emission, a remarkable threefold increase of the radiant intensity from 0.34 mW/sr to 0.92 mW/sr at θ = 0° and 20 mA as well as a twofold increase of the total optical power from 0.43 mW to 0.86 mW emitted within a cone of half opening angle of θ = 35° at 20 mA.