Regensburg 2019 – wissenschaftliches Programm
HL 45.56: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Finite element simulation and experimental characterization of field-effect transistors based on amorphous zinc tin oxide — •Michael Bar, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
Within the quest for field-effect transistors (FETs) with high frequency switching capability various designs have been proposed, including vertical layouts [1,2]. Cost effective production of transparent, flexible FETs also requires a naturally abundant material such as zinc tin oxide (ZTO), a transparent amorphous oxide semiconductor which can be deposited at room temperature .
Simple lateral device designs, however, are not optimal for achieving high frequency switching for which vertical layouts are well suited due to the strongly reduced channel length, avoiding the need for submicrometer lithography.
In this contribution, a finite element approach was used to simulate lateral and vertical thin-film field-effect transistors in order to determine the influence of device geometry on static and dynamic properties such as transfer characteristics, cut-off frequency and on-resistance. The obtained data is then compared with experimental results obtained from transistors fabricated on sputtered ZTO thin films .
A. N. Morgan et al., Proc. IEEE, 59(5), 805-807, (1971).
B. J. Baliga, J. Appl. Phys., 53(3), 1759-1764, (1982).
H. Frenzel et al., Phys. Status Solidi (a), 212(7), 1482-1486, (2015).
S. Vogt et al., Appl. Phys. Lett., 113(13), 133501, (2018).