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HL: Fachverband Halbleiterphysik
HL 17: Materials and devices for quantum technology I
HL 17.1: Vortrag
Montag, 16. März 2020, 15:00–15:15, POT 112
3D Active Sites of Te in Hyperdoped Si by Hard X-ray Photoelectron Kikuchi Diffraction — •Moritz Hoesch1, Mao Wang2, Shengqiang Zhou2, Olena Fedchenko3, Christoph Schlüter1, Katerina Medjanik3, Sergej Babenkov3, Aimo Winkelmann4, Hans-Joachim Elmers3, and Gerd Schönhense3 — 1DESY Photon Science, Hamburg, Germany — 2Helmholt-Zentrum Dresden-Rossendorf, Germany — 3JGU, Institut für Physik, Mainz, Germany — 4Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Krakow, Poland
n-type doping of Si by Te in excess of the solubility limit was recently demonstrated to lead to hyperdoped material [1]. The samples are made by ion implantation combined with pulsed laser melting. Our investigation by hard x-ray photoelectron spectroscopy (hXPS) reveals at least two different Te species. At the highest doping concentration we study the photoelectron scattering patterns using hard x-ray photoelectron diffraction (hXPD) [2]. Substitutional site occupation of both Te monomers as well as dimers is identified with increasing binding energy (main features in the XPS spectra). The sharp hXPD patterns allow the detailed analysis of the local surrounding of the dopant atoms [3]. At the highest binding energy an additional species is found and the distinct hXPD pattern at this binding energy suggests the assignment to a small fraction of Te in clusters.
[1] M. Wang et al. Phys. Rev. Appl. 11 054039 (2019) and references therein. [2] O. Fedchenko et al NJP 21, 113031 (2019); [3] O. Fedchenko et al., this conference.