Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 29: 2D Materials III: Growth and Heterostructures (joint session O/HL)

HL 29.1: Vortrag

Dienstag, 17. März 2020, 10:30–10:45, GER 38

High structural and optical quality of transition metal dichalcogenides grown by chemical vapor deposition — •Antony George1, Shivangi Shree2, Tibor Lehnert3, Christof Neumann1, Meryam Benelajla2, Cedric Robert2, Xavier Marie2, Kenji Watanabe4, Takashi Taniguchi4, Ute Kaiser3, Bernhard Urbaszek2, and Andrey Turchanin11Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743 Jena, Germany — 2Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France — 3Ulm University, Central Facility of Materials Science Electron Microscopy, D-89081 Ulm, Germany — 4National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

We have achieved highly reproducible large area growth of high-quality monolayer transition metal dichalcogenides (TMDs) by our modified chemical vapor deposition (CVD) process. We correlate the structure of our CVD grown MoS2 monolayers studied by high-resolution transmission electron microscopy (HRTEM) with the optical quality revealed in temperature dependent optical spectroscopy. We determine a defect concentration of the order of 1013 cm−2 for our samples with HRTEM. We show optical transition linewidth of 5 meV at low temperature (T = 4 K) for the free excitons in emission and absorption after encapsulation in hBN. This is comparable to the best monolayer samples obtained by mechanical exfoliation of bulk material.

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