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Dresden 2020 – scientific programme

The DPG Spring Meeting in Dresden had to be cancelled! Read more ...

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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.38: Poster

Tuesday, March 17, 2020, 13:30–15:45, P3

Creation of a shallow graphitic layer in diamond for field effect applications — •Dennis Oing, Martin Geller, Axel Lorke, and Nicolas Wöhrl — Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany

Diamond is a promising wide band gap semiconductor with high hole and electron mobilities, high electric breakdown field and the highest thermal conductivity.
However, a field effect transistors based on the surface conductivity of the two-dimensional hole gas need a dielectric material, e.g. Al2O3, between the diamond surface and the gate. However, these materials have a lower electric breakdown field and lower thermal conductivity. Hence, transistors using these materials lack the potential that transistors solely made from diamond possess.
In this contribution, graphitic layers as bottom-gate below the two-dimensional hole gas were produced 100 nm below the diamond surface by ion implantation. Implantation was done on CVD-grown single crystal layers using 12C-ions with a kinetic energy of 95 keV. The samples were subsequently annealed from 210 up to 650 to form the graphitic layers. The produced layers were characterized using Raman spectroscopy and measuring IV-characteristics.
Raman spectroscopy reveals that after implantation a small G-peak appears. Additionally, a D-peak can be observed after annealing. These peaks correspond to the formation of amorphous carbon layers. Our results suggest that the created structures can be used for field effect applications.

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