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HL: Fachverband Halbleiterphysik
HL 42: Oxide semiconductors
HL 42.2: Vortrag
Mittwoch, 18. März 2020, 09:45–10:00, POT 51
CVD based growth of ZnO layers on Si(111) w/ and w/o AlN nucleation layers. — •Raphael Müller1, Okan Gelme1, Florian Huber1, Jan-Patrick Scholz2, Martin Mangold1, Alexander Minkow2, Ulrich Herr2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University — 2Institute for Functional Nanosystems, Ulm University
The epitaxial growth of high quality zinc oxide (ZnO) layers on silicon (Si(111)) is a challenging task, because the formation of an amorphous SiOx layer at the interface usually inhibits the growth of a well oriented ZnO layer. One way to circumvent this is the prior growth of a thin AlN nucleation layer, grown by MOVPE. Such nucleation layers were optimized and finally overgrown with ZnO layers under different growth conditions by a chemical vapor deposition (CVD)-based growth method, in order to find the best combination of growth parameters for both processes. The resulting ZnO layer quality was characterized by atomic force microscopy, electron backscattering diffraction, high resolution X-ray diffraction, low temperature photoluminescence and high resolution TEM measurements. A drastic increase in layer quality was observed comparing such layers to those w/o AlN nucleation layer, proofing the critical role of SiOx at the interface. Growth temperature and thickness of the AlN nucleation are critical parameters, too, and have to be adjusted, as well as the temperature and II/VI-ratio of the ZnO growth. Finally we achieved perfectly aligned ZnO layers with a surface roughness RMS value of 1.2 nm, and a FWHM in ω-scan of 715 arcsec for the ZnO (0002) reflection.