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HL: Fachverband Halbleiterphysik
HL 49: Quantum dots and wires II
HL 49.4: Vortrag
Mittwoch, 18. März 2020, 15:45–16:00, POT 151
Electronic structure analysis of GaAs quantum dots using correlation spectroscopy — •Robert Keil1, Nand Lal Sharma1, Caspar Hopfmann1, Fei Ding2, and Oliver Schmidt1,3 — 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany — 2Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, 30167 Hannover, Germany — 3Chemnitz University of Technology, Reichenhainer Strasse 70, 09107 Chemnitz, Germany
Droplet etched GaAs quantum dots are promising candidates for many quantum light sources and have already demonstrated to be the best entangled photon sources to date [1]. In order to employ these devices also in other quantum optical schemes - such as carrier spin coherence based generation of photonic cluster states - a comprehensive understanding of the electronic level structure is essential. In this work we will present an electronic structure analysis based on comparative correlation spectroscopy of single photons combined with traditional photoluminescence spectroscopy methods.
[1] Zopf et. al. PRL 123, 160502 (2019)