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HL: Fachverband Halbleiterphysik
HL 51: Semiconductor lasers I
HL 51.3: Vortrag
Mittwoch, 18. März 2020, 15:30–15:45, POT 51
Characteristics of red MECSEL with a quantum dot active region — •Ana Ćutuk1, Roman Bek2, Michael Jetter1, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integraed Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart — 2Twenty-One Semiconductors GmbH, Kiefernweg 4, 72654 Neckartenzlingen
Quantum dots (QDs) as active region for a laser are very attractive due to their promising properties e.g. higher differential gain, lower threshold, better temperature stability and wavelength versatility. We choose a membrane approach as it is realized by a membrane external-cavity surface-emitting laser (MECSEL) for improved thermal budget. Therefore we realized a semiconductor membrane structure consisting of an AlGaInP/InP QD active region deposited on GaAs substrate in the Stranski-Krastanow growth mode by metal-organic vapor-phase epitaxy (MOVPE) with emission in the red spectral range. Our usual processing technique implies a membrane release from the substrate with capillary bonding between two heat spreaders. However, the internal strain makes this approach rather difficult, which is why also wafer-bonding of the semiconductor structure to one heat spreader and further processing of the membrane including bonding the second heat spreader was performed. In this contribution we present our newest results on the QD-based MECSEL. Ongoing characterization includes comparison of the two bonding approaches in terms of laser output in order to learn more about the influence of the internal strain.