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          09:30 | 
          HL 58.1 | 
          
            
            
              
                MOVPE growth of (11-22) AlGaN/AlN on m-plane sapphire — •Humberto Foronda, Sarina Graupeter, Valeria Bonito-Oliva, Mike Pietsch, Priti Gupta, Norman Susilo, Frank Mehnke, Johannes Enslin, Tobias Schulz, Tim Wernicke, Klaus Irmscher, Martin Albrecht, and Michael Kneissl
              
            
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          09:45 | 
          HL 58.2 | 
          
            
            
              
                Optoelectronic Characterization of GaN Nanowires on SiC-6H — •Andrea Wieland, Theresa Hoffmann, and Martin Stutzmann
              
            
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          10:00 | 
          HL 58.3 | 
          
            
            
              
                Growth of AlN on Si(111) by reactive pulsed sputtering — •Florian Hörich, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
              
            
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          10:15 | 
          HL 58.4 | 
          
            
            
              
                Room temperature excitonic recombination processes in GaInN/GaN quantum wells at studied via carrier density dependent time-resolved photoluminescence — •S. Müllner, P. Henning, P. Horenburg, H. Bremers, U. Rossow, and A. Hangleiter
              
            
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          10:30 | 
          HL 58.5 | 
          
            
            
              
                STEM and STEBIC analysis of screw dislocations in GaN to investigate structural and electronic properties — •Tobias Westphal, Sevastian V. Shapenkov, Oleg S. Vyvenko, and Michael Seibt
              
            
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          10:45 | 
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              30 min. break.
            
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          11:15 | 
          HL 58.6 | 
          
            
            
              
                Investigations on the defect luminescence in high aluminum containing AlGaN heterostructures — •Marcel Schilling, Norman Susilo, Tim Wernicke, and Michael Kneissl
              
            
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          11:30 | 
          HL 58.7 | 
          
            
            
              
                Indium rich cubic group III Nitrides fabricated with molecular beam epitaxy — •Falco Meier, Dirk Reuter, and Donat J. As
              
            
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          11:45 | 
          HL 58.8 | 
          
            
            
              
                Capacitance-Voltage spectroscopy at room temperature of self-assembled GaN quantum dot ensembles under illumination — •Carlo Alberto Sgroi, Julien Brault, Jean-Yves Duboz, Peter Conrad, Arne Ludwig, and Andreas D. Wieck
              
            
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          12:00 | 
          HL 58.9 | 
          
            
            
              
                Effect of low temperature GaN underlayers on the carrier lifetimes in GaInN/GaN quantum wells — •Philipp Horenburg, Philipp Henning, Savutjan Sidik, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
              
            
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          12:15 | 
          HL 58.10 | 
          
            
            
              
                Luminescence of GaN quantum dots on highly reflective deep UV Bragg mirrors — •Hannes Schürmann, Christoph Berger, Gao Kang, Gordon Schmidt, Peter Veit, Frank Bertram, Sebastian Metzner, Armin Dadgar, Jürgen Bläsing, André Strittmatter, Mark Holmes, and Jürgen Christen
              
            
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