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HL: Fachverband Halbleiterphysik
HL 59: THz and MIR physics in semiconductors
HL 59.2: Vortrag
Donnerstag, 19. März 2020, 09:45–10:00, POT 151
Towards plasmonic tunnel gaps by on-chip laser ablation for on-chip THZ applications — •Michael Zartenar1, Philipp Zimmermann1,2, Alexander Höttger1, Noelia Fernandez1, Anna Nolinder1, Kai Müller1, Jonathan Finley1,2, and Alexander Holleitner1,2 — 1Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany — 2Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
We demonstrate that prestructured metal plasmonic nanogaps can be shaped on-chip to below 10 nm by femtosecond laser ablation. We explore the plasmonic properties and the nonlinear photocurrent characteristics of such formed tunnel junctions. The photocurrent can be tuned from multiphoton absorption toward the laser-induced strong-field tunneling regime in the nanogaps, and gives rise to a field emission of ballistic hot electrons propagating across the nanoscale junctions. We show that a unipolar current of hot electrons is achieved by designing the plasmonic enhancement factors in the junctions to be asymmetric, which allows ultrafast electronics on the nanometer scale. We particularly demonstrate that femtosecond optical pulses in the near-infrared (NIR) applied to such nanogaps can drive electronic circuits with a prospective bandwidth of up to 10 THz. We thank the DFG for funding via the Cluster of Excellence e-conversion.