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HL: Fachverband Halbleiterphysik

HL 64: Poster II

HL 64.29: Poster

Donnerstag, 19. März 2020, 10:00–13:00, P1A

Frequency Shift of Electronic Resonances in Self Assembled InAs Quantum Dots — •Ibrahim A. Engin, Ismail Bölükbaşi, Sven Scholz, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-UniversitätBochum, D-44780 Bochum, Germany

Self-assembled InAs quantum dots (SAQD) proved promising semiconductor structures as single-photon sources and provide possibilities for quantum memories. Therefore understanding the physical properties is important and in progress. We investigate electronic resonances in InAs SAQDs by using C(V)-spectroscopy.

The thermal shift of the s-states has been reported and described with a master equation [1], which has been improved further to model excitonic and non-equilibrium states in such SAQD [2]. The model shows contrarily shifting in dependence of frequency and temperature.

Here we investigate both s- and p-states in dependence of temperature and frequency to measure the shifting characteristics of p-peaks and observe the dominancy of the frequency shift for s-states. The superposition of thermal and frequency shift are being analyzed. Adjustments to the master equation model are needed.

[1] Brinks, F. et al., "Thermal shift of the resonance between an electron gas and quantum dots: what is the origin?" New J. Phys. 18, 123019 (2016).

[2] Valentin, S. et al., "Illumination-induced nonequilibrium charge states in self-assembled quantum dots", Phys. Rev. B 97, 045416 (2018).