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HL: Fachverband Halbleiterphysik
HL 64: Poster II
HL 64.30: Poster
Donnerstag, 19. März 2020, 10:00–13:00, P1A
Ridge-width dependent beam profile analysis of InAs/InGaAs quantum dot lasers — •Adrian Hamel1, Christoph Weber1, Dominik Auth1, Vladimir V. Korenev2,3, Artem V. Savelyev2, Mikhail V. Maximov2,3, Alexey E. Zhukov2,3, and Stefan Breuer1 — 1Institute of Applied Physics, Technische Universität Darmstadt, 64289 Darmstadt, Germany — 2St. Petersburg Academic University RAS, ul. Khlopina 8/3, 194021 St. Petersburg, Russia — 3Peter the Great St. Petersburg Polytechnic University, St. Petersburg 195251, Russia
Monolithic mode-locked edge-emitting semiconductor quantum dot lasers with narrow ridge widths to broad ridge widths emitting at 1.25 micrometer are ideal sources for the generation of broad optical frequency combs for short-reach inter and intra data-center links. In this contribution, the beam profile of InAs/InGaAs quantum dot lasers with 5 micrometer, 10 micrometer and 50 micrometer broad ridge waveguides and different doping concentration in the GaAs barriers are studied experimentally. The work focuses on the comparison of near and far field beam profile. This work is supported by the Russian Foundation for Basic Research (project #18-502-12081).