Dresden 2020 – wissenschaftliches Programm

Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 68: Nitrides: Preparation and characterization II

HL 68.1: Vortrag

Donnerstag, 19. März 2020, 15:00–15:15, POT 112

Impact of high free-carrier concentrations on optical properties of cubic GaN — •Elias Baron1, Rüdiger Goldhahn1, Michael Deppe2, Donat J. As2, and Martin Feneberg11Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — 2Department Physik, Universität Paderborn, Germany

The zincblende III-nitrides are possible candidates for replacing the wurtzite phase nitrides in certain applications such as quantum-dot-based devices. Despite their metastable nature, several improvements concerning control and quality have been reported. Free-electron concentrations n above 1020cm−3 are achievable by using Ge as a donor in zincblende GaN and AlGaN. We present a characterization of thin film zincblende GaN, deposited by plasma-assisted molecular beam epitaxy on 3C-SiC/Si substrates in (001) orientation. The complex dielectric functions (DF) in the mid-infrared are obtained by spectroscopic ellipsometry, from which the transverse-optical phonon and plasma frequencies are determined. These results are corroborated by Raman experiments. Utilizing Kane’s model for the band structure in the vicinity of the Γ-point of the Brillouin zone, taking into account many-body effects like band-gap renormalization and Burstein-Moss shift, and the optical effectice electron mass determined by the plasma frequency, an all-optical determination of the free-carrier concentration of zincblende GaN is achieved.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2020 > Dresden