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HL: Fachverband Halbleiterphysik
HL 68: Nitrides: Preparation and characterization II
HL 68.2: Vortrag
Donnerstag, 19. März 2020, 15:15–15:30, POT 112
Absolute internal quantum efficiency of GaInN/GaN quantum wells under steady state conditions — •Savutjan Sidik1, Philipp Henning1,2, Philipp Horenburg1, Heiko Bremers1,2, Uwe Rossow1, and Andreas Hangleiter1,2 — 1Institut für Angewandte Physik, Technische Universität Braunschweig — 2Laboratory for Emerging Nanometrology, Technische Universität Braunschweig
An accurate determination of the internal quantum efficiency (IQE) is essential in optimizing the efficiency of GaInN/GaN quantum wells (QWs). A common approach to determine the IQE from temperature-dependent photoluminescence (PL) measurements is based on the assumption that the IQE is 100 % at low temperature. The temperature-dependent integrated PL intensity is normalized to the different incident laser power levels, then normalizing the normalized PL intensity to the maximum value for each temperature and power density gives the IQE. Recently, we have been able to verify this assumption for selected samples using time-resolved PL measurements. In this contribution, we compare samples with known and unknown low-temperature IQE based on their absolute low-temerature PL intensity under otherwise identical conditions. On the one hand, this allows a verification of the 100 % cases. On the other hand, the absolute low-temperature IQE can be assessed by such a comparison for arbitrary samples.