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HL: Fachverband Halbleiterphysik

HL 69: Quantum dots and wires III

HL 69.2: Vortrag

Donnerstag, 19. März 2020, 15:30–15:45, POT 151

Ultra-doped Germanium nanowires using ion implantation and flash-lamp anneling — •Ahmad Echresh, Mao Wang, Yufang Xie, Slawomir Prucnal, Yordan M. Georgiev, and Lars Rebohle — Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany

Germanium (Ge) is a promising high mobility channel material for future nanoelectronics. Materials with high carrier mobility can enable increased integrated circuit functionality or reduced power consumption. Hence, Ge based nanoelectronic devices could offer improved performance at reduced power consumption compared to Si electronics. In this work, Germanium-on-insulator (GeOI) substrates were doped with phosphorous (P) using ion beam implantation followed by flash lamp annealing (FLA). During FLA, the implanted layer recrystallized and P was electrically activated. Then, Ge nanowires were fabricated using electron beam lithography and inductively coupled plasma etching. Raman spectra showed amorphisation of the Ge structure after implantation and good recovery after FLA. Rutherford backscattering spectrometry measurements were used to verify the crystal quality of Ge layer before and after FLA. Moreover, Hall effect measurement configuration is designed for single Ge nanowires to determine the carrier mobility and carrier concentration. The results of these measurements will be shown at the conference. The goal is to fabricate a p-n junction along the Ge nanowires and use them as infrared sensors.