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HL: Fachverband Halbleiterphysik
HL 69: Quantum dots and wires III
HL 69.3: Vortrag
Donnerstag, 19. März 2020, 15:45–16:00, POT 151
Electrical Characterisation of Te-doped InAs Nanowires — •Anton Faustmann1, Pujitha Perla1,3, Detlev Grützmacher1,2,3, Mihail Lepsa2,3, and Thomas Schäpers1,3 — 1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — 2Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich, 52425 Jülich, Germany — 3JARA-Fundamentals of Future Information Technology (JARA-FIT), Jülich-Aachen Research Alliance, Germany
InAs features high electron mobility and absence of a Schottky barrier at metal interfaces enabling ohmic contacts. In combination with large g-factor and high Rashba spin-orbit coupling this makes InAs nanowires a promising candidate for research of quantum effects.
InAs nanowires with Te doping grown by molecular beam epitaxy were investigated in terms of their electrical transport properties at both room and cryogenic temperatures. The nanowires were grown in a catalyst-free vapour-solid process without using Au droplets. In contrast to Si, which shows amphoteric behaviour, Te acts as n-type dopant. It furthermore offers the possibility of an increased overall doping level. The Te doping concentration was found to affect both the morphology of the nanowires as well as electrical properties. The shape of the nanowires depends on Te uptake. Their intrinsic as well as contact resistances decrease considerably at increased doping level. Field-effect measurements using a global back gate show great effect on the conductance, however no complete pinch-off was observable with conductance saturating at high negative gate voltages. Resistances were found to be only slightly increased at cryogenic temperatures.