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HL: Fachverband Halbleiterphysik
HL 81: Semiconductor lasers II
HL 81.3: Vortrag
Freitag, 20. März 2020, 10:15–10:30, POT 81
Dynamic instabilities in gain-folded mode-locked VECSELs — •Marius Großmann1, Roman Bek2, Michael Jetter1, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany — 2Twenty-One Semiconductors, Kiefernweg 4, 72654 Neckartenzlingen, Germany
Since the first demonstration of mode-locked vertical external-cavity surface-emitting lasers (VECSELs) using semiconductor saturable absorbers (SESAMs) in the year 2000, these lasers have shown to provide a diffraction-limited beam quality as well as high output powers across multiple emission wavelengths. These ultrashort pulse lasers offer interesting dynamics, which are often linked to semiconductor properties and can be influenced by the exact cavity design. A cavity geometry often used is the z-shaped cavity, which provides further flexibilities concerning mode area ratios, cavity lengths and additional intra-cavity elements like etalons and nonlinear crystals.
We present the mode-locked emission characteristics of a red-emitting SESAM mode-locked VECSEL with an average output power up to 2 mW. We put the focus on the temporal dynamics recorded upon wavelength tuning of the pulsed emission and discuss the emission dynamics based on numerical modelling.