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HL: Fachverband Halbleiterphysik
HL 81: Semiconductor lasers II
HL 81.6: Vortrag
Freitag, 20. März 2020, 11:15–11:30, POT 81
Nonlinear lensing in optically-pumped semiconductor disk lasers — Christian Kriso1, Sascha Kress1, Tasnim Munshi1, Marius Grossmann2, Roman Bek3, Michael Jetter2, Peter Michler2, Wolfgang Stolz1, Martin Koch1, and •Arash Rahimi-Iman1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integraed Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart — 3Twenty-One Semiconductors GmbH, Kiefernweg 4, 72654 Neckartenzlingen
Semiconductor disk lasers or vertical-external-cavity surface-emitting-lasers (VECSELs) have been highlighted in recent years as promising sources for ultrashort pulses. Particularly, saturable-absorber-free "self-mode-locked" operation of VECSELs has raised considerable attention. The origin of this phenomenon is still not well-enough understood to effectively utilize it for future mode-locking device concepts. Currently, nonlinear lensing in the VECSEL chip itself, which has been indicated to be sufficiently strong to enable Kerr-lens-like mode-locking, is suspected to be one driving mechanism behind self-mode-locking [Kriso et al., Opt. Express (2019)]. Here, we summarize a systematical characterization of the effective nonlinear refractive index and nonlinear absorption coefficient of an optically-pumped gain chip, having probed the complex, effective third-order susceptibility of the chip for excited charge-carrier densities similar to that of laser operation [Kriso et al., Phot. Tech. Lett. (in press)].