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O: Fachverband Oberflächenphysik

O 103: Topology and Symmetry Protected Materials I

O 103.8: Vortrag

Donnerstag, 19. März 2020, 12:15–12:30, WIL A317

Surface and bulk electronic structure of the 3D topological insulator HgTe(001) — •Raphael Crespo Vidal¹, Julia Issing¹, Lukas Lunczer², Giovanni Marini³, Lena Fürst², Simon Moser⁴, Giorgio Sangiovanni⁵, Domenico Di Sante⁵, Hartmut Buhmann², Gianni Profeta³, Laurens W. Molenkamp², Hendrik Bentmann¹, and Friedrich Reinert¹ — ¹Experimental Physics VII, University of Würzburg, Germany — ²Experimental Physics III, University of Würzburg, Germany — ³Department of Physical and Chemical Sciences & SPIN-CNR, University of L’Aquila, Italy — ⁴Experimental Physics IV, University of Würzburg, Germany — ⁵Theoretical Physics I, University of Würzburg, Germany

Since the discovery of topological insulators HgTe proved itself to be a versatile material system, exhibiting a variety of topologically non-trivial states depending on adjustable structural parameters. Despite its persistent relevance in the field of topological materials a comprehensive understanding of its electronic band structure is still lacking. Here we will present an extensive angle-resolved photoemission (ARPES) study of epitaxially grown HgTe on CdTe(001). The lattice mismatch induces a strain of 0.3% which drives the system in its 3D TI phase. The surface preparation for ARPES was done by cleavage of a Te capping layer as well as in situ transfer. Structural and chemical characterisation by LEED and core-level spectroscopy ensure a pristine surface quality. We find good agreement of our ARPES data with ab initio DFT calculations regarding band positions and dispersions as well as the orbital symmetry of the bands.