Dresden 2020 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 3: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)

O 3.3: Vortrag

Montag, 16. März 2020, 10:00–10:15, POT 81

The Ultimate Radiative Emission Rate of van der Waals materials — •Mark Kamper Svendsen1, Yaniv Kurman2, Ido Kaminer2, and Kristian Sommer Thygesen11Techincal University of Denmark, Kgs. Lyngby, Denmark — 2Technion University, Haifa, Israel

We consider the coupling between intersubband transitions in few layer transition metal dichalcogenide(TMD) stacks and graphene plasmons. Specifically, we consider few layer TMD quantum wells[1] of different thicknesses, squeezed in between a metallic substrate and a graphene sheet. Using a new, non-perturbative combined MQE-DFT time domain methodology to calculate the state evolution, we find radiative rates exceeding 1 THz and extreme Purcell factors of more than 1E6. Interestingly, we find that for certain combinations of the TMD stack width and graphene Fermi level, graphene plasmon launching becomes the dominant method of emission. This could potentially point to interesting new possibilities in graphene plasmonics.

[1] Schmidt, P., Vialla, F., Latini, S. et al. Nano-imaging of intersubband transitions in van der Waals quantum wells. Nature Nanotech 13, 1035*1041 (2018) doi:10.1038/s41565-018-0233-9

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