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O: Fachverband Oberflächenphysik
O 38: Interfaces and Thin Films II (joint session CPP/DY/O)
O 38.12: Vortrag
Dienstag, 17. März 2020, 12:45–13:00, ZEU 260
Exploring the Resistive Switching Properties of HfO2 Nanoparticle Assemblies — •Sonam Maiti1, Chen Liu1, Thorsten Ohlerth2, Ulrich Simon2, and Silvia Karthäuser1 — 1Peter Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, Germany — 2Institute of Inorganic Chemistry (IAC), RWTH Aachen University, Germany
Hafnium oxide nanocrystals (NCs) can be considered as possible candidates for further miniaturization of future resistive random access memories. The switching properties of NC assemblies remain underexplored due to difficulties in fabricating ordered structures. Here, we use a facile, low-cost method to prepare highly ordered assemblies of 6 nm HfO2 NCs capped with TOPO via evaporation based self-assembly. X-ray photoelectron spectroscopy is applied to investigate the oxidation state of near surface HfOx under various conditions. Electrical transport measurements were performed on devices with micrometer and nanometer sized gaps to determine the resistive switching character of NCs arrays. They enable the observation of cyclic voltammograms with redox reaction peaks when used with micrometer sized gaps. We discuss the electronic properties of these devices in the light of varying contributions of electronic vs ionic transport and highlight the effect on the device stability. We especially focus on the resistive switching behaviour of the NP assemblies which is dependent on the oxygen vacancy formation under the influence of the capping ligand.