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Dresden 2020 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 46: 2D semiconductors and van der Waals heterostructures IV (joint session HL/DS/O)

Dienstag, 17. März 2020, 14:00–16:00, POT 81

14:00 O 46.1 Resolving the interlayer charge transfer in van der Waals heterostructures by ultrafast THz emission nanoscopy — •Markus Plankl, Martin Zizlsperger, Fabian Mooshammer, Felix Schiegl, Fabian Sandner, Markus A. Huber, Tom Siday, Jessica L. Boland, Tyler L. Cocker, and Rupert Huber
14:15 O 46.2 Influence of dark states on excitonic spin relaxation in transition metal dichalcogenides — •Malte Selig, Dominik Christiansen, and Florian Katsch
14:30 O 46.3 Kelvin probe force microscopy-based direct measurements of contact resistance in 2D semiconductor thin film transistors — •Aleksandar Matkovic, Andreas Petritz, Gerburg Schider, Markus Krammer, Markus Kratzer, Michael Gärtner, Andreas Terfort, Christian Teichert, Egbert Zojer, Karin Zojer, and Barbara Stadlober
14:45 O 46.4 MOVPE of large-scale 2D-2D heterostructures for optoelectronic applicationsAnnika Grundmann, Clifford McAleese, Ben Richard Conran, Andrew Pakes, Dominik Andrzejewski, Tilmar Kümmel, Gerd Bacher, Kenneth Bo Khin Teo, •Michael Heuken, Holger Kalisch, and Andrei Vescan
15:00 O 46.5 Efficient Hot Electron Transfer at Graphene-WS2 van der Waals BilayersSHuai Fu and •Hai Wang
15:15 O 46.6 Excitation Induced Dephasing in Monolayer Transition Metal Dichalcogenides — •Florian Katsch, Malte Selig, and Andreas Knorr
15:30 O 46.7 Dirac physics in honeycomb semiconductors — •Christiaan Post, Nathali Franchina Vergel, Tomas Meerwijk, Jesper Moes, Xavier Wallart, Guillaume Fleury, Ludovic Desplanque, Ingmar Swart, Christophe Delerue, Bruno Grandidier, and Daniel Vanmaekelbergh
15:45 O 46.8 Structural and electronic properties of twisted MoS2 bilayers — •Somepalli Venkateswarlu, Andreas Honecker, and Guy Trambly de Laissardière
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