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O: Fachverband Oberflächenphysik

O 47: Poster Session - 2D Materials: Electronic Structure, Excitations, etc.

O 47.3: Poster

Dienstag, 17. März 2020, 18:15–20:00, P2/EG

Highly ordered metallic phase of Indium on SiC(0001) — •Jonas Erhardt, Maximilian Bauernfeind, Victor Rogalev, Jörg Schäfer, and Ralph Claessen — Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, Würzburg, Germany

Indium thin films attract attention due to diverse electronic properties, which feature for instance a two-dimensional electron gas (2DEG) [1] and superconductivity [2] in the 2D limit or Dirac-electrons in a triangular lattice. Here, we present a combined angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling microscopy (STM) study of highly ordered indium (≈  2 monolayer) on silicon carbide (SiC). STM reveals a Kagome-like superstructure with a lattice constant of approximately 2.1   nm assigned as a (4√3 ×4√3)R30^∘ reconstruction. Additionally, ARPES as well as scanning tunneling spectroscopy (STS) show a metallic band structure with a pronounced electron pocket, indicative of an 2DEG. Interestingly, STS further reveals negative differential conductance (NDC), which is in contrast to the textbook interpretation as local density of states and is possibly related to substrate effects.

[1] E. Rotenberg et al., Phys. Rev. Lett. 91, 246404 (2003).

[2] T. Zhang et al., Nat. Phys. 6, 104 (2010).