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O: Fachverband Oberflächenphysik
O 80: Poster Session - Graphene: Adsorption, Intercalation and Doping
O 80.2: Poster
Mittwoch, 18. März 2020, 18:15–20:00, P2/EG
Doping of ta-C by ultra-low energy implantation — •Felix Junge, Manuel Auge, and Hans Hofsäss — II. Institute of Physics, Georg-August-University Göttingen, 37077 Göttingen, Germany
Doping of graphene to change its electrical properties is highly desirable. To achieve this, we use a unique mass-selected ion beam deposition system, which makes it possible to work in an energy range of 10<E<600 eV for implantation and thus to implant into a 2D-lattice. In order to test the possible implantion in graphene with different elements, we perfomed ultra low-energy (10-25 eV) implantation in layers of tetrahedral amorphous carbon (ta-C) on silicon. Fluence and retention rate were measured after implantation with RBS using a 860 keV He2+-beam and NRA to analyze the light elements using a 430 keV proton beam. With this setup a detection limit for e.g. boron of about 6·1013 B/cm2 in 1000 s could be achieved. Furthermore, the measurement results were compared with simulations done with SDTrimSP. Successful implantation was possible for e.g. He, B, N, Ne, P, Ar, Cr, Mn, Fe, Co, Se and Au.
Financial support by the DFG through project We1889/13-1 is gratefully acknowledged.