Dresden 2020 – wissenschaftliches Programm
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O 9.8: Vortrag
Montag, 16. März 2020, 12:15–12:30, WIL A317
Compensating for electrostatically-induced artifacts in scanning near-field optical microscopy — •Tobias Nörenberg1, Susanne C. Kehr1, and Lukas M. Eng1,2 — 1Institute of Applied Physics, Technische Universität Dresden, Germany — 2ct.qmat: Dresden-Würzburg Cluster of Excellence - EXC 2147, Technische Universität Dresden, Germany
Nanotechnology and modern material sciences demand reliable local probing techniques with nanometer resolution. In particular, scattering-type scanning near-field optical microscopy (s-SNOM) is a well-established method that is sensitive to the local optical response of a sample, yielding a wavelength-independent lateral resolution on the order of ∼10 nm. Nevertheless, local variations of the electric potential at the sample surface may dramatically affect the tip-sample interaction, thereby introducing artifacts in both optical near-field signal and topography.
Here, we present a comprehensive experimental study investigating the mentioned artifacts for different sample systems, i.e. metals (Au), semiconductors (Si), and insulators (SiO2). By combining s-SNOM with Kelvin-probe force microscopy (KPFM) we firstly fully compensate for these errors, while secondly also being able to measure such local potentials. Optical, topographic, and electronic information hence become well separated and quantified.