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Dresden 2020 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 91: Poster Session - Semiconductor Substrates: Structure, Epitaxy and Growth

O 91.2: Poster

Mittwoch, 18. März 2020, 18:15–20:00, P2/1OG

Surface structure of MOVPE-prepared GaP(111)B — •Peter Kleinschmidt1, Pingo Mutombo2, Theresa Berthold1,3, Agnieszka Paszuk1, Matthias Steidl1, Gernot Ecke4, Andreas Nägelein1, Christian Koppka1,3, Oliver Supplie1, Stefan Krischok1,3, Oleksandr Romanyuk2, Marcel Himmerlich1,3,5, and Thomas Hannappel11Institut für Physik, Technische Universität Ilmenau PF 100565, 98684 Ilmenau — 2Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic — 3Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany — 4Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany — 5European Organization for Nuclear Research - CERN, 1211 Meyrin, Switzerland

The MOVPE-prepared GaP(111)B surface was studied by XPS, STM, LEED, AES and AFM as well as ab initio DFT. Deoxidation under TBP, followed by high-temperature annealing under pure hydrogen results in the formation of Ga-rich islands, whereas the regions in between are atomically flat. Atomically resolved STM of these regions shows a largely disordered surface, but small units of (2 × 2), c(4 × 2), and ( 3 × 3)R30ordering can be identified. According to DFT calculations, these are the most favorable reconstructions under hydrogen-rich conditions. We conclude that STM images the dangling bonds of an otherwise hydrogen-terminated phosphorus face.

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