SurfaceScience21 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 78: Poster Session VI: 2D Materials: Electronic structure, excitations, etc. II

O 78.14: Poster

Mittwoch, 3. März 2021, 13:30–15:30, P

Kelvin probe force microscopy-based direct measurements of contact resistance in 2D semiconductor thin film transistor — •Aleksandar Matković¹, Andreas Petritz², Gerburg Schider², Markus Krammer³, Markus Kratzer¹, Esther Karner-Petritz², Alexander Fian², Herbert Gold², Michael Gärtner⁴, Andreas Terfort⁴, Christian Teichert¹, Egbert Zojer³, Karin Zojer³, and Barbara Stadlober² — ¹Institute of Physics, Montanuniversität Leoben, Leoben, Austria — ²Joanneum Research MATERIALS, Weiz, Austria — ³Institute of Solid State Physics, NAWI Graz, Graz University of Technology, Graz, Austria — ⁴Institut für Anorganische und Analytische Chemie, Goethe-University Frankfurt, Germany

This study aims at direct imaging of contact resistance in MoS₂-based thin film transistors (TFTs). Exfoliated single-crystal flakes of MoS₂ have been used in a bottom-contact TFT configuration. Pyrimidine-containing self-assembled monolayers (SAMs) were employed to tune the work function of gold electrodes. Kelvin probe force microscopy measurements were carried out during operation of the devices in order to directly image potential drops across the channel and to study the influence of different SAM treatments on the contact resistance. By independently imaging potential drops at both carrier injection and extraction points, we demonstrate asymmetry of contact resistances in MoS₂-based TFTs, as well as their non-linear and bias-dependent behavior [10.1002/aelm.202000110].