Heidelberg 2022 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 13: Semiconductor Detectors:Radiation Hardness, new Materials and Concepts
T 13.3: Vortrag
Montag, 21. März 2022, 16:45–17:00, T-H26
Influence of radiation damage on the absorption of near-infrared light in silicon — •Annika Vauth, Robert Klanner, and Jörn Schwandt — Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Deutschland
Radiation damage of silicon sensors is an important area of investitation in high energy physics today. Frequently, red and near-infrared light is used to generate electron-hole pairs to study the charge collection efficiency of radiation-damaged silicon sensors. In order to determine the absolute number of produced charge carriers, the light absorption coefficient, α, has to be known.
To study the change of α due to radiation-induced defects, we have measured the transmission of light with wavelengths between 1-2 µm through silicon samples irradiated to 1 MeV-neutron-equivalent fluences between 0 and 1 × 1017 cm−2.
In this contribution, the results of these measurements will be presented: the contribution of the irradiation to α was found to scale with fluence for the entire fluence range investigated. In the wavelength region around 1.8 µm, evidence for the production of the radiation-induced divacancy defect V2i0 with a density approximately proportional to the fluence was found. A decrease of the effective band gap of silicon with irradiation fluence will be shown, up to a reduction of about 60 meV for a fluence of 1 × 1017 cm−2.