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T: Fachverband Teilchenphysik

T 40: Pixel Detectors 2

T 40.5: Vortrag

Dienstag, 22. März 2022, 17:15–17:30, T-H25

Guard-ring optimisation for sensors in LFoundry 150nm CMOS technology — •Sinuo Zhang, Tomasz Hemperek, and Jochen Dingfelder — Physikalishes Institut, Rheinishe Friedrich-Welhem Universität Bonn, Nussallee 12, 53115 Bonn, Germany

In high energy physics, the silicon pixel sensors manufactured in commercial CMOS chip fabrication lines have been proven to have a good radiation hardness and spatial resolution. Along with the mature manufacturing techniques and the potential of large throughput provided by the foundries, the so-called ``passive CMOS" sensor has become an interesting alternative to standard planar sensors, in particular for large-area applications. High and predictable breakdown behaviour for pre- and post-irradiation is a major design goal for sensors and the guard-ring structure is one factor to optimise. This is especially important for applications that require higher voltages.

We present several concepts of the guard-ring design that can be realised in LFoundry 150nm CMOS technology. As was studied with TCAD simulations, such designs can lead to a higher breakdown voltage by modifying the potential and electric field distribution in the guard-ring area. A number of test structures have been designed for the RD50 MPW-3 and the CMS CROC submission for verifications and further studies.