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T: Fachverband Teilchenphysik
T 40: Pixel Detectors 2
T 40.9: Talk
Tuesday, March 22, 2022, 18:15–18:30, T-H25
Characterization of depleted monolithic active pixel sensors (DMAPS) designed in 150nm CMOS technology — •Lars Schall1, Jochen Dingfelder1, Christian Bespin1, Ivan Caicedo1, Tomasz Hemperek1, Toko Hirono1,2, Fabian Hügging1, Hans Krüger1, Piotr Rymaszewski1, Tianyang Wang1,3, and Norbert Wermes1 — 1Physikalisches Insitut, University of Bonn — 2DESY, Hamburg — 3Zhangjiang Laboratory, China
Monolithic active pixel sensors with depleted substrates are a promising option for pixel tracker detectors in high radiation environments. The use of a highly resistive silicon substrate and short drift paths enhance the radiation tolerance, while a careful guard ring design facilitates high biasing voltages to deplete the sensor.
LF-Monopix2 is the latest prototype of a DMAPS development in 150 nm CMOS technology. It features a fully functional column-drain readout architecture in a 2x1 cm2 matrix. A reduced pixel pitch of 50x150 µ m2 compared to its predecessor results in a smaller detector capacitance and an improved spatial resolution. Each pixel’s digital electronics are integrated within the large collection electrode. Optimization of the pixel layout minimizes potential cross talk from the digital transients into the sensor node.
LF-Monopix2 chips have successfully been thinned to a thickness of 100 µ m while their breakdown voltage remained above 350 V. In this talk, the ongoing characterization and preliminary results of the first test-beam campaign of these sensors are discussed.