Heidelberg 2022 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
T: Fachverband Teilchenphysik
T 66: Semiconductor Detectors: Radiation Hardness, new Materials and Concepts 2
T 66.4: Vortrag
Mittwoch, 23. März 2022, 17:00–17:15, T-H25
Timing measurements of a tip avalanche photodiode (TAPD) - A near-infrared enhanced silicon photomultiplier based on spherical depletion — •Wolfgang Schmailzl1,3, Jonathan Preitnacher1, Erika Garutti2, and Walter Hansch1 — 1Bundeswehr University Munich, Neubiberg, Germany — 2University of Hamburg, Hamburg, Germany — 3Broadcom Inc., Regensburg, Germany
The gain of attention in LiDAR technology also pushed the development of sensors for time of flight measurements. Such a measurement requires a fast and very sensitive receiver. Often a wavelength in the near-infrared (NIR) region is chosen if the emitter is part of the system while a high sensitivity over a broad range is an advantage for deviating applications. Silicon photomultiplier (SiPM) with enhanced sensitivity in the NIR region provide a good combination of performance and cost-efficiency. In our investigations we simulated and fabricated spherical junctions for the single-photon avalanche diodes and a photo-detection efficiency of 22% at 905nm was achieved. We present timing measurements of this new NIR SiPM to provide an overview and to put the performance into the context of possible applications with very low and high light intensities. Compared to their blue enhanced counterparts, the single photon time resolution of these devices is lower where some of this performance loss is related to the required depletion depth for longer wavelengths while the current design is still not at its limit. We want to outline some of these intrinsic limits and show where improvements can be made.