Regensburg 2022 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 13: Ultra-Fast Phenomena
HL 13.10: Vortrag
Dienstag, 6. September 2022, 12:00–12:15, H33
Gain recovery dynamics after stimulated emission in type-II semiconductor laser materials — •Markus Stein1, Felix Schäfer1, Janine Lorenz1, Johannes Steiner2, Jörg Hader3, Jerry Moloney3, Torsten Meier2, Stephan W. Koch4, and Sangam Chatterjee1 — 1Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany — 2Department of Physics, Paderborn University, Warburger Strasse 100, D-33098 Paderborn, Germany — 3Wyant College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, USA — 4Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
Type-II active devices combine the advantages of spectrally broad, temperature-stable efficient gain with the potential for electrical injection pumping. Intrinsic charge-carrier relaxation dynamics limit the feasible repetition rates beyond constraints of cavity design and heat removal. Here, we investigate the recovery of material gain after a stimulated emission process in an InGaAs/GaAs/GaAsSb heterostructure, experimentally simulating the operation condition of a pulsed laser system. In an optical pump - optical probe setup, a first optical pulse injects hot charge carriers. Subsequently, a second pulse tuned to the broad spectral region in which gain is observed is used to stimulate emission. A detailed analysis of the dynamics after stimulated emission reveals that the physical limit for the highest possible laser repetition rate for this material system is in the range of 100 GHz.