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Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 16: Focus Session: Quantum Properties at Functional Oxide Interfaces (joint session DS/HL)

HL 16.2: Vortrag

Mittwoch, 7. September 2022, 10:00–10:15, H17

A detailed interface and surface analysis of BaSnO3 in LaInO3/BaSnO3 heterostructures — •Martina Zupancic1, Wahib Aggoune2, Daniel Pfützenreuter1, Zbigniew Galazka1, Houari Amari1, Claudia Draxl2, Jutta Schwarzkopf1, and Martin Albrecht11Leibniz-Institut für Kristallzüchtung, Berlin, Germany — 2Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin, Germany

LaInO3/BaSnO3 heterostructures have lately attracted a lot of interest due to the high electron mobility of ∼300cm2/Vs in BaSnO3 and the formation of a 2DEG at the interface. In LaAlO3/SrTiO3 system, the origin of the 2DEG is attributed to the polar discontinuity and an electronic reconstruction at the n-type LaO-TiO2 interface. Controlling the interface termination is therefore crucial to accomplish heterostructures with desired properties. Here, we combine density-functional theory, atomic resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy (EELS) to study the LaInO3/BaSnO3 interface. Experiment and theory are in excellent agreement and show that free BaSnO3 (100) surfaces are BaO terminated, while the interface between BaSnO3 and LaInO3 is SnO2 terminated. This finding indicates that during the growth of LaInO3 layer on BaSnO3 Ba atoms exchange from the subsurface to the surface. Preliminary EELS analysis of a few monolayer thick LaInO3 grown on BaSnO3 shows indications of Ba atoms on the LaInO3 surface, confirming that atomic exchange in this system promotes the energetically favorable SnO2-LaO interface.

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