Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 21: Optical Properties 1
HL 21.3: Vortrag
Mittwoch, 7. September 2022, 15:30–15:45, H32
Temperature dependence of the mid-infrared dielectric function of InSb from 80 to 800 K — Melissa Rivero Arias1, Cesy Zamarripa1, Jaden Love1, Carola Emminger1,2,3,4, and •Stefan Zollner1 — 1New Mexico State University, Las Cruces, NM, USA — 2Masaryk University, Brno, Czech Republic — 3Uni Leipzig — 4Humboldt Universität, Berlin
We describe measurements of the mid-infrared dielectric function of bulk InSb near the direct band gap using Fourier-transform infrared spectroscopic ellipsometry from 80 to 800 K in an ultra-high vacuum cryostat. Indium antimonide is the zinc blende compound semiconductor with the smallest direct band gap (E0=0.18 eV at 300K) due to its heavy elements, the large resulting spin-orbit splitting and Darwin shifts. It has a low melting point of 800 K. Previously, the band gap of InSb has only been measured up to room temperature and estimated from Hall effect measurements of the effective mass up to 470 K. Calculations indicate that InSb should undergo a topological phase transition from semiconductor to semi-metal at 600 K. It is interesting to see in the data if this transition occurs below the melting point of InSb.