Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.17: Poster
Mittwoch, 7. September 2022, 18:00–20:00, P2
Modification of charge transport in single layer MoS2 — •Zahra Fekri1, Phanish Chava1, Gregor Hlawacek1, Vivek Koladi2, Tommaso Venanzi3, Wajid Awan1, Antony George4, Andrey Turchanin4, Kenji Watanabe5, Takashi Taniguchi5, Manfred Helm1, and Artur Erbe1 — 1Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany — 2Imec, Leuven, Belgium — 3Sapienza University of Rome, Rome, Italy — 4Friedrich Schiller University, Jena, Germany — 5National Institute for Materials Science, Tsukuba, Japan
Ion beam irradiation is a technique that can be used to alter the electrical and optical properties of two-dimensional (2D) materials through defect creation. In this work, we used 5-7.5 keV helium and neon ions to modify charge transport in monolayer molybdenum disulfide (MoS2). Electrical characterization was performed in-situ immediately after ion beam irradiation. Raman and photoluminescence spectroscopy were implemented to further characterize the effect of ion irradiation on MoS2. Our experiments show that the electrical properties of MoS2-based transistors strongly depend on the nature of the substrate and the specific ion and dose used. Although 1012-1013 helium ions/cm2 contribute to the increase in the current level, a similar dose of neon ions deteriorates the channel. To examine the role of the substrate, few-layer hexagonal boron nitride (h-BN) was used as an intermediate layer between MoS2 and the Si/SiO2 substrate. MoS2 samples on h-BN show different electrical behaviour during ion irradiation as compared to the MoS2 flakes which were directly placed on SiO2.