Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.6: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Charge carrier dependent Raman response in WS2 monolayers — •Hendrik Lambers, Nihit Saigal, and Ursula Wurstbauer — Institute of Physics, University of Münster, Münster, Germany

Semiconducting transition metal dichalcogenides such as WS2 and MoS2 are among the most widely studied 2D materials due to their unique optical and electronic properties. Monolayers of these materials show a large exciton dominated light matter coupling. Exciton-phonon and electron-phonon interaction effects are prone to modification of the charge carrier density and impacts the optical and electronic behavior of the atomically thin semiconductors [1]. Here we report on a detailed Raman study of the charge carrier dependent evolution of the phonon modes in WS2 monolayer embedded in a field effect structure using a solid-state electrolyte [2]. The optimized field effect structure using a polymer electrolyte top gating allows tuning the fermi-energy cross the band gap and hence enables ambipolar doping.

We acknowledge financial support via DFG WU 637/7-1 and SPP2244.

[1] B. Miller et al., Nat Commun 10, 807 (2019).

[2] B. Miller at al., APL 106, 122103 (2015).

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