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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.61: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Characterization of InGaAs quantum dots as active region for edge emitting laser with emission in the telecom O-band — •Philipp Noack — Institut für Halbleiteroptik und funktionelle Grenzflächen, Universität Stuttgart, Deutschland

Generally, laser diodes with quantum dots as active region are superior to quantum well laser diodes in terms of threshold current and temperature stability. Additionally, stacking of quantum dot layers can provide a broad gain spectrum, which can be ideally used for the fabrication of tunable laser devices with large bandwidth.

To this end, indium gallium arsenide quantum dots with emission in the telecom O-band wavelength range around 1300nm are grown at high densities with MOVPE and characterized with photoluminescence and atomic force microscopy measurements. We have designed edge emitting structures with waveguide simulations and characterized them using the segmented contact method. Parameters for the growth, like the V/III material ratio, were adjusted to create high density InGaAs quantum dots in a single layer. The emission intensity was further enhanced by the incorporation of a dots in well structure, an arsine interruption during growth and vertical stacking of quantum dot layers.

Following the design of the laser device, characterizations of edge emitting structures with one and multiple QD layer with regards to absorption characteristics were performed, which allowed for the characterization of the intrinsic losses of differently structured devices.