Regensburg 2022 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 3: Quantum Dots and Wires 1: Transport and Electronic Properties
HL 3.5: Vortrag
Montag, 5. September 2022, 10:45–11:00, H32
Charge tuning of GaAs quantum dots using Schottky diode structure — •Nand Lal Sharma1, Ghata Satish Bhayani1, Oliver G. Schmidt2, and Caspar Hopfmann1 — 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany — 2Material Systems for Nanoelectronics, Technical University Chemnitz, 09107 Chemnitz, Germany
Semiconductor quantum dots (QDs) are promising candidates for high quality photon sources and the biexciton-exciton cascade in these structures is one of the most advanced techniques for generation of entangled photon pairs. In this work droplet etched GaAs/AlGaAs QDs [1] are embedded in Schottky diode structures within nanomembranes. The membranes are transferred to Au coated substrates via selective etching. The Au coated substrate facilitates the back while the Si-doped GaAs acts as the top contact. The QD photoluminescence from different charge states is controlled by application of an external bias. The effects of quantum dot charging, quantum confined Stark effect, exciton fine structure and photon coherence are investigated as a function of bias voltage.
[1] Keil et. al. Nat. comm. 8, 15501 (2017)